| PART |
Description |
Maker |
| ZVN2106G ZVN2106GTA |
N-channel MOSFET
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Zetex Semiconductors
Diodes
|
| ZXMN10A25GTA ZXMN10A25G |
100V SOT223 N-channel enhancement mode MOSFET
|
ZETEX[Zetex Semiconductors]
|
| ZXMN6A08GTC ZXMN6A08GTA ZXMN6A08 ZXMN6A08G |
60V SOT223 N-channel enhancement mode MOSFET
|
ZETEX[Zetex Semiconductors]
|
| ZVN0545G-15 |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
|
| ZVN2120G |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
Zetex Semiconductors
|
| ZVN4210G-15 |
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes Incorporated
|
| ZX5T851G ZX5T851GTA ZX5T851GTC |
NPN Generation 5 Transistors in SOT223
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
|
ZETEX[Zetex Semiconductors]
Diodes Incorporated
|
| MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system
P-CHANNEL ENHANCEMENT?ODE
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| BCP51 BCP53 BCP52-10 BCP53-10 BCP53-16 BCP51-10 BC |
PNP Silicon AF Transistors
General Purpose Transistors - SOT223; VCEO=45V; hFE=63..160
General Purpose Transistors - SOT223; VCEO=60V; hFE=63..160
General Purpose Transistors - SOT223; VCEO=80V; hFE=63..160
General Purpose Transistors - SOT223; VCEO=45V; hFE=40..250
General Purpose Transistors - SOT223; VCEO=45V; hFE=100..250
General Purpose Transistors - SOT223; VCEO=60V; hFE=100..250
General Purpose Transistors - SOT223; VCEO=80V; hFE=100..250
|
Infineon Technologies A...
Infineon Technologies AG
|
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道：漏电流3A, 漏源电压20V，导通电.06Ω；P沟道：漏电流-2A, 漏源电压-20V，导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
